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Matching Properties of Deep Sub-Micron Mos Transistors by Jeroen A Croon: New

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Specificaties

Objectstaat
Nieuw: Een nieuw, ongelezen en ongebruikt boek in perfecte staat waarin geen bladzijden ontbreken of ...
Book Title
Matching Properties of Deep Sub-Micron Mos Transistors
Publication Date
2005-03-24
Pages
206
ISBN
9780387243146
Series
The Springer International Series in Engineering and Computer Science Ser.
Publication Year
2005
Type
Textbook
Format
Hardcover
Language
English
Publication Name
Matching Properties of Deep Sub-Micron Mos Transistors
Author
Jeroen A. Croon, Willy Sansen, Herman E. Maes
Item Length
9.1in
Publisher
Springer
Item Width
6.1in
Item Weight
38.1 Oz
Number of Pages
Xii, 206 Pages

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Product Information

Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.

Product Identifiers

Publisher
Springer
ISBN-10
0387243143
ISBN-13
9780387243146
eBay Product ID (ePID)
45694267

Product Key Features

Author
Jeroen A. Croon, Willy Sansen, Herman E. Maes
Publication Name
Matching Properties of Deep Sub-Micron Mos Transistors
Format
Hardcover
Language
English
Series
The Springer International Series in Engineering and Computer Science Ser.
Publication Year
2005
Type
Textbook
Number of Pages
Xii, 206 Pages

Dimensions

Item Length
9.1in
Item Width
6.1in
Item Weight
38.1 Oz

Additional Product Features

Series Volume Number
851
Number of Volumes
1 Vol.
Lc Classification Number
Tk7867-7867.5
Table of Content
Introduction: Matching analysis. Importance for circuit design. State of the art. Research objectives. Outline of this book.- Measurement and Modeling of Mismatch. Measurement setup. Experimental setup. Modeling of mismatch in the drain current. Width and length dependence. Example: Yield of a current-steering D/A converter. Conclusions.- Parameter Extraction. Extraction methods. Experimental setup. Comparison of extraction methods. Future issues. Conclusions.- Physical Origins of Mosfet Mismatch. Basic operation of the MOS transistor. Mismatch in the drain current. Physical origins of fluctuations. Conclusions.- Technological Aspects. Technology descriptions. Impact of the gate. Impact of the halo implantation. Comparison of di®erent CMOS technologies. Alternative device concepts. Conclusions.- Impact of Line-Edge Roughness. Characterization of line-edge roughness. Modeling the impact of line-width roughness. Experimental investigation of the impact of LWR. Prediction of the impact of LWR and guidelines. Conclusions.- Conclusions, Future Work and Outlook. Conclusions. Future work.- Outlook.
Copyright Date
2005
Topic
Electronics / Semiconductors, Electronics / Circuits / General, Electronics / General, Electronics / Transistors, Physics / General
Lccn
2005-277728
Dewey Decimal
621.3815/284
Intended Audience
Scholarly & Professional
Dewey Edition
22
Illustrated
Yes
Genre
Technology & Engineering, Science

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